{"product_id":"mitsubishi-electric-gcu08bb-130-80173-109-01-2-gu-g08-thyristor-unit","title":"Mitsubishi Electric GCU08BB-130 80173-109-01-2 GU-G08 Unità a tiristori","description":"\u003ch3\u003eDescrizione\u003c\/h3\u003e\n\u003cp\u003eIl \u003cstrong\u003eMitsubishi Electric GCU08BB-130\u003c\/strong\u003e è un tiristore \u003cstrong\u003eGCT\u003c\/strong\u003e simmetrico ad alta potenza con spegnimento comandato (Gate Commutated Turn-off), integrato con un gruppo scheda driver di gate dedicato \u003cstrong\u003eGU-G08\u003c\/strong\u003e, progettato specificamente per l'uso in inverter ad alta potenza. Questo dispositivo industriale di tipo press-pack presenta una configurazione coassiale ottimizzata, in cui il semiconduttore \u003cstrong\u003eGCT\u003c\/strong\u003e e il driver di gate sono interconnessi direttamente per ottenere una commutazione del gate a bassa induttanza e una robusta immunità ai disturbi. L'unità offre una gestione dell'alimentazione essenziale, con una tensione di interdizione di picco ripetitiva di 6500V e una corrente di conduzione controllabile ripetitiva di 800A. Identificato dal produttore con il codice \u003cstrong\u003e80173-109-01-2\u003c\/strong\u003e, il \u003cstrong\u003eGCU08BB-130\u003c\/strong\u003e garantisce una commutazione allo stato solido affidabile per invertitori a sorgente di corrente, chopper CC, riscaldatori a induzione e convertitori da CC a CC.\u003c\/p\u003e\n\u003ch3\u003eCaratteristiche\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eLayout simmetrico del dispositivo \u003cstrong\u003eGCT\u003c\/strong\u003e con scheda driver di gate \u003cstrong\u003eGU-G08\u003c\/strong\u003e integrata per un controllo diretto a bassa induttanza.\u003c\/li\u003e\n\u003cli\u003eQuattro indicatori LED diagnostici integrati forniscono un feedback operativo in tempo reale: POWER SUPPLY OK (verde), G-K OK (verde), GATE ON (giallo) e GATE OFF (rosso).\u003c\/li\u003e\n\u003cli\u003eInterfaccia di controllo integrata in fibra ottica, con nodi dedicati di trasmissione e ricezione per garantire l'isolamento elettrico e un'elevata immunità alle interferenze elettromagnetiche (EMI).\u003c\/li\u003e\n\u003cli\u003eDoppi punti di test integrati a bordo (GATE TEST POINT e CATHODE TEST POINT) per una diagnostica sul campo semplice e la verifica della tensione.\u003c\/li\u003e\n\u003cli\u003eStruttura press-pack ad alta tensione, con dissipazione termica bilanciata sulle superfici di raffreddamento su entrambi i lati durante un serraggio meccanico elevato.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eApplicazioni\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eInvertitori a sorgente di corrente\u003c\/li\u003e\n\u003cli\u003eChopper CC\u003c\/li\u003e\n\u003cli\u003eRiscaldatori a induzione\u003c\/li\u003e\n\u003cli\u003eConvertitori da CC a CC\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eSpecifiche tecniche\u003c\/h3\u003e\n\u003ch4\u003eCaratteristiche elettriche (componente GCT)\u003c\/h4\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eParametro\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eSimbolo\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eCondizioni\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eValore nominale \/ Limite\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eUnità\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione inversa di picco ripetitiva\u003c\/td\u003e\n\u003ctd\u003eVRRM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e6500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione inversa di picco non ripetitiva\u003c\/td\u003e\n\u003ctd\u003eVRSM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e6500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione di interdizione di picco ripetitiva\u003c\/td\u003e\n\u003ctd\u003eVDRM\u003c\/td\u003e\n\u003ctd\u003eDriver di gate alimentato\u003c\/td\u003e\n\u003ctd\u003e6500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione di interdizione di picco non ripetitiva\u003c\/td\u003e\n\u003ctd\u003eVDSM\u003c\/td\u003e\n\u003ctd\u003eDriver di gate alimentato\u003c\/td\u003e\n\u003ctd\u003e6500\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione di stabilità CC a lungo termine\u003c\/td\u003e\n\u003ctd\u003eV(LTDS)\u003c\/td\u003e\n\u003ctd\u003eDriver di gate alimentato, lambda = 100 Fit\u003c\/td\u003e\n\u003ctd\u003e3600\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente di conduzione efficace (RMS)\u003c\/td\u003e\n\u003ctd\u003eIT(RMS)\u003c\/td\u003e\n\u003ctd\u003eApplicato a tutti gli angoli di conduzione\u003c\/td\u003e\n\u003ctd\u003e520\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente di conduzione media\u003c\/td\u003e\n\u003ctd\u003eIT(AV)\u003c\/td\u003e\n\u003ctd\u003eOnda sinusoidale a f = 60Hz, theta = 180 gradi, Tt = 62 °C\u003c\/td\u003e\n\u003ctd\u003e330\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente di conduzione controllabile ripetitiva\u003c\/td\u003e\n\u003ctd\u003eITQRM\u003c\/td\u003e\n\u003ctd\u003eVDM = 3\/4 VDRM, VD = 3000V, LC = 0.3 uH, Tj = 25\/125 °C\u003c\/td\u003e\n\u003ctd\u003e800\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente di conduzione di picco non ripetitiva\u003c\/td\u003e\n\u003ctd\u003eITSM\u003c\/td\u003e\n\u003ctd\u003eUn semiperiodo a 60 Hz, inizio a Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e4.8\u003c\/td\u003e\n\u003ctd\u003ekA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eIntegrazione nel tempo del quadrato della corrente\u003c\/td\u003e\n\u003ctd\u003eI2t\u003c\/td\u003e\n\u003ctd\u003eUn semiperiodo a 60 Hz, inizio a Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e9,6 x 10^4\u003c\/td\u003e\n\u003ctd\u003eA2s\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePendenza critica di aumento della corrente nello stato di conduzione\u003c\/td\u003e\n\u003ctd\u003edit\/dt\u003c\/td\u003e\n\u003ctd\u003eVD = 3000 V, IT = 800 A, Cs = 0,1 uF, Rs = 10 Ohm, Tj = 25\/125 °C, f = 60 Hz\u003c\/td\u003e\n\u003ctd\u003e1000\u003c\/td\u003e\n\u003ctd\u003eA\/us\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePendenza critica di aumento della corrente di recupero inverso\u003c\/td\u003e\n\u003ctd\u003edir\/dt\u003c\/td\u003e\n\u003ctd\u003eIT = 800 A, VA = 3000 V, Tj = 25\/125 °C, Cs = 0,1 uF, Rs = 10 Ohm\u003c\/td\u003e\n\u003ctd\u003e1000\u003c\/td\u003e\n\u003ctd\u003eA\/us\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDissipazione di potenza diretta di picco del gate\u003c\/td\u003e\n\u003ctd\u003ePFGM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003ekW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDissipazione di potenza inversa di picco del gate\u003c\/td\u003e\n\u003ctd\u003ePRGM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e17\u003c\/td\u003e\n\u003ctd\u003ekW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDissipazione media di potenza diretta del gate\u003c\/td\u003e\n\u003ctd\u003ePFG(AV)\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e100\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDissipazione media di potenza inversa del gate\u003c\/td\u003e\n\u003ctd\u003ePRG(AV)\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e120\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione diretta di picco del gate\u003c\/td\u003e\n\u003ctd\u003eVFGM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e10\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione inversa di picco del gate\u003c\/td\u003e\n\u003ctd\u003eVRGM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e21\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente diretta di picco del gate\u003c\/td\u003e\n\u003ctd\u003eIFGM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e500\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente inversa di picco del gate\u003c\/td\u003e\n\u003ctd\u003eIRGM\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e800\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch4\u003eCaratteristiche elettriche (componente GCT)\u003c\/h4\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eParametro\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eSimbolo\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eCondizioni\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eMin\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eTip\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eMax\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eUnità\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione nello stato di conduzione\u003c\/td\u003e\n\u003ctd\u003eVTM\u003c\/td\u003e\n\u003ctd\u003eIT = 400 A, Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e5.5\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente inversa di picco ripetitiva\u003c\/td\u003e\n\u003ctd\u003eIRRM\u003c\/td\u003e\n\u003ctd\u003eVRM = 6500 V, Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e250\u003c\/td\u003e\n\u003ctd\u003emA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente di picco ripetitiva nello stato di interdizione\u003c\/td\u003e\n\u003ctd\u003eIDRM\u003c\/td\u003e\n\u003ctd\u003eVDM = 6500 V, Tj = 125 °C, driver di gate alimentato\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e100\u003c\/td\u003e\n\u003ctd\u003emA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente inversa di gate\u003c\/td\u003e\n\u003ctd\u003eIGRM\u003c\/td\u003e\n\u003ctd\u003eVRG = 21 V, Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e40\u003c\/td\u003e\n\u003ctd\u003emA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePendenza critica di aumento della tensione nello stato di interdizione\u003c\/td\u003e\n\u003ctd\u003edv\/dt\u003c\/td\u003e\n\u003ctd\u003eVD = 3000 V, Tj = 125 °C, driver di gate alimentato (onda esponenziale)\u003c\/td\u003e\n\u003ctd\u003e3000\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eV\/us\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTempo di accensione\u003c\/td\u003e\n\u003ctd\u003etgt\u003c\/td\u003e\n\u003ctd\u003eTj = 125 °C, IT = 800 A, VD = 3000 V, Cs = 0,1 uF, Rs = 10 Ohm\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e5\u003c\/td\u003e\n\u003ctd\u003eus\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTempo di ritardo all'accensione\u003c\/td\u003e\n\u003ctd\u003etd\u003c\/td\u003e\n\u003ctd\u003eTj = 125 °C, IT = 800 A, VD = 3000 V, Cs = 0,1 uF, Rs = 10 Ohm\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e1\u003c\/td\u003e\n\u003ctd\u003eus\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eEnergia di commutazione all'accensione\u003c\/td\u003e\n\u003ctd\u003eEon\u003c\/td\u003e\n\u003ctd\u003eIT = 400 A, VD = 3000 V, di\/dt = 1000 A\/us, Cs = 0,1 uF, Rs = 10 Ohm, Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e0.6\u003c\/td\u003e\n\u003ctd\u003eJ\/P\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTempo di immagazzinamento\u003c\/td\u003e\n\u003ctd\u003ets\u003c\/td\u003e\n\u003ctd\u003eIT = 800 A, VDM = 3\/4 VDRM, VD = 3000 V, Cs = 0,1 uF, Rs = 10 Ohm, Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e3\u003c\/td\u003e\n\u003ctd\u003eus\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eEnergia di commutazione allo spegnimento\u003c\/td\u003e\n\u003ctd\u003eEoff\u003c\/td\u003e\n\u003ctd\u003eIT = 400 A, VDM = 4000 V, VD = 3000 V, Cs = 0,1 uF, Rs = 10 Ohm, Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e2.3\u003c\/td\u003e\n\u003ctd\u003eJ\/P\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCarica di recupero inverso\u003c\/td\u003e\n\u003ctd\u003eQRR\u003c\/td\u003e\n\u003ctd\u003eVA = 3000 V, IT = 400 A, di\/dt = 1000 A\/us\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e1800\u003c\/td\u003e\n\u003ctd\u003euC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eEnergia di recupero inverso\u003c\/td\u003e\n\u003ctd\u003eErec\u003c\/td\u003e\n\u003ctd\u003eCs = 0,1 uF, Rs = 10 Ohm, Tj = 125 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e4.4\u003c\/td\u003e\n\u003ctd\u003eJ\/P\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCorrente di attivazione del gate\u003c\/td\u003e\n\u003ctd\u003eIGT\u003c\/td\u003e\n\u003ctd\u003eVD = 24 V, RL = 0,1 Ohm, Tj = 25 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e0.5\u003c\/td\u003e\n\u003ctd\u003eA\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione di attivazione del gate\u003c\/td\u003e\n\u003ctd\u003eVGT\u003c\/td\u003e\n\u003ctd\u003eMetodo CC\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e1.5\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch4\u003eGruppo scheda del driver di gate (componente GU-G08)\u003c\/h4\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eParametro\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eSimbolo\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eCondizioni\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eMin\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eTip\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eMax\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eUnità\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eTensione di alimentazione\u003c\/td\u003e\n\u003ctd\u003eVGIN\u003c\/td\u003e\n\u003ctd\u003eIngresso dell'alimentazione CC tramite connettore Phoenix\u003c\/td\u003e\n\u003ctd\u003e19\u003c\/td\u003e\n\u003ctd\u003e20\u003c\/td\u003e\n\u003ctd\u003e21\u003c\/td\u003e\n\u003ctd\u003eV\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eConsumo di potenza del gate\u003c\/td\u003e\n\u003ctd\u003ePGIN\u003c\/td\u003e\n\u003ctd\u003eIT = 420 Arms, f = 780 Hz, duty = 0,33\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e35\u003c\/td\u003e\n\u003ctd\u003eW\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTempo di ritardo della corrente di gate all'accensione\u003c\/td\u003e\n\u003ctd\u003etfd\u003c\/td\u003e\n\u003ctd\u003eTa = 25 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e3.0\u003c\/td\u003e\n\u003ctd\u003eus\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTempo di ritardo della corrente di gate allo spegnimento\u003c\/td\u003e\n\u003ctd\u003etrd\u003c\/td\u003e\n\u003ctd\u003eTa = 25 °C\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e3.0\u003c\/td\u003e\n\u003ctd\u003eus\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch4\u003eDati meccanici e ambientali\u003c\/h4\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eParametro\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eSimbolo\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eCondizioni\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eMin\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eTip\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eMax\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eUnità\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eForza di montaggio\u003c\/td\u003e\n\u003ctd\u003eFM\u003c\/td\u003e\n\u003ctd\u003eLimitazione della compressione richiesta\u003c\/td\u003e\n\u003ctd\u003e11.1\u003c\/td\u003e\n\u003ctd\u003e13\u003c\/td\u003e\n\u003ctd\u003e15.8\u003c\/td\u003e\n\u003ctd\u003ekN\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePeso\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eMassa del modulo base\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e1100\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eg\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDiametro del polo\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eProfilo di accoppiamento del componente GCT (±0.2mm)\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e47\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003emm\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSpessore dell'alloggiamento\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003eSpessore del componente GCT (±0.5mm)\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e26\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003emm\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTemperatura di funzionamento della giunzione\u003c\/td\u003e\n\u003ctd\u003eTj\u003c\/td\u003e\n\u003ctd\u003eFunzionamento continuo\u003c\/td\u003e\n\u003ctd\u003e-10\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e125\u003c\/td\u003e\n\u003ctd\u003edegC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTemperatura di stoccaggio\u003c\/td\u003e\n\u003ctd\u003eTstg\u003c\/td\u003e\n\u003ctd\u003eAmbiente circostante\u003c\/td\u003e\n\u003ctd\u003e-10\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003edegC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTemperatura ambiente di funzionamento\u003c\/td\u003e\n\u003ctd\u003eTa\u003c\/td\u003e\n\u003ctd\u003eAria locale dell'alloggiamento (consigliata \u003c= 40 degC)\u003c\/td\u003e\n\u003ctd\u003e-10\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e60\u003c\/td\u003e\n\u003ctd\u003edegC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eResistenza termica dalla giunzione all'aletta\u003c\/td\u003e\n\u003ctd\u003eRth(j-f)\u003c\/td\u003e\n\u003ctd\u003eConfigurazione di raffreddamento su entrambi i lati\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e—\u003c\/td\u003e\n\u003ctd\u003e0.025\u003c\/td\u003e\n\u003ctd\u003eK\/W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch3\u003eCollegamenti\/Interfacce\u003c\/h3\u003e\n\u003ch4\u003eAssegnazioni dei componenti dell'interfaccia\u003c\/h4\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eNome dell'interfaccia \/ del connettore\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eIdentificativo del componente \/ tipo\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eFunzione\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eIngresso dell'alimentazione a 20V\u003c\/td\u003e\n\u003ctd\u003ePhoenix Contact MSTB2.5\/2-G-5.08AU\u003c\/td\u003e\n\u003ctd\u003eIngresso dell'alimentazione principale a 20VDC per la scheda del driver del gate\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eIngresso in fibra ottica\u003c\/td\u003e\n\u003ctd\u003eAgilent HFBR-2521\u003c\/td\u003e\n\u003ctd\u003ePorta del ricevitore per le linee di impulsi di controllo ottico esterne\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eUscita del segnale di guasto\u003c\/td\u003e\n\u003ctd\u003eAgilent HFBR-1521\u003c\/td\u003e\n\u003ctd\u003ePorta del trasmettitore per il feedback ottico e il monitoraggio dello stato del driver\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePunto di test del gate\u003c\/td\u003e\n\u003ctd\u003ePin del terminale sulla scheda\u003c\/td\u003e\n\u003ctd\u003ePunto fisico per la misurazione del potenziale del gate\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePunto di test del catodo\u003c\/td\u003e\n\u003ctd\u003ePin del terminale sulla scheda\u003c\/td\u003e\n\u003ctd\u003ePunto fisico per la misurazione del potenziale del catodo\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch3\u003eLinee guida per l'installazione\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eControllo della pressione di serraggio\u003c\/strong\u003e: Il gruppo press-pack richiede una forza meccanica rigorosa compresa tra 11.1 kN e 15.8 kN (obiettivo: 13 kN). Una forza di montaggio inadeguata degrada la resistenza termica dell'interfaccia interna e comporta il rischio di guasti elettrici sotto carichi di corrente elevati.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eParametri di alimentazione del controllo\u003c\/strong\u003e: Fornire direttamente al connettore Phoenix a 2 pin un profilo di tensione continua stabile tra 19V e 21V. Assicurarsi che il cablaggio di alimentazione soddisfi i requisiti di corrente continua senza scendere sotto 19V durante la carica ad alta frequenza del gate.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eRegole per il collegamento dati ottico\u003c\/strong\u003e: Assicurarsi che i cavi in fibra ottica siano inseriti saldamente nei sottoassiemi Agilent HFBR-2521 e HFBR-1521. Mantenere raggi di curvatura superiori alle soglie meccaniche minime per impedire errori di attenuazione luminosa.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eApplicazione dell'interfaccia termica\u003c\/strong\u003e: Rivestire i poli del dissipatore in modo uniforme e omogeneo con grasso termico ad alte prestazioni. La resistenza termica complessiva del percorso termico dalla giunzione all'aletta deve rimanere inferiore a 0.025 K\/W.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSicurezza del gioco delle viti\u003c\/strong\u003e: Limitare la profondità di innesto delle viti corrispondenti che penetrano direttamente nei blocchi termici o nel dissipatore tra 6 mm e 8 mm, per evitare deformazioni dell'alloggiamento o sollecitazioni sulla scheda.\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"Mitsubishi Electric","offers":[{"title":"Default Title","offer_id":52695186866539,"sku":"GCU08BB-130 80173-109-01-2","price":100.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0953\/3227\/0443\/files\/allen-bradley-gcu08bb-130-80173-109-01-2-thyristor-unit-nyla4bdqm54_674d8272-7e20-422f-890a-f8b4d18817e4.jpg?v=1766114488","url":"https:\/\/www.plcprotech.com\/it\/products\/mitsubishi-electric-gcu08bb-130-80173-109-01-2-gu-g08-thyristor-unit","provider":"PLC ProTech Ltd.","version":"1.0","type":"link"}