Implementing 3-Switch XOR Ladder Logic with Internal Bit
Implement a 3-SPST switch XOR light circuit in LogixPro or RSLogix 500 using an internal relay bit. Includes truth tables, boolean equations, and verified.
The Mitsubishi Electric GCU08BB-130 is a high-power symmetrical Gate Commutated Turn-off (GCT) thyristor unit integrated with a dedicated GU-G08 gate driver board assembly, engineered specifically for high-power inverter use. This industrial press-pack type device features an optimized co-axial configuration where the GCT semiconductor and the gate driver are interconnected directly to achieve low-inductance gate commutation and robust noise immunity. The unit provides critical power management with a repetitive peak off-state voltage of 6500V and a repetitive controllable on-state current of 800A. Bearing the manufacturer identification 80173-109-01-2, the GCU08BB-130 delivers dependable solid-state switching for current source inverters, DC choppers, induction heaters, and DC to DC converters.
| Parameter | Symbol | Conditions | Rating / Limit | Unit |
|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | — | 6500 | V |
| Non-repetitive peak reverse voltage | VRSM | — | 6500 | V |
| Repetitive peak off-state voltage | VDRM | Gate driver energized | 6500 | V |
| Non-repetitive peak off-state voltage | VDSM | Gate driver energized | 6500 | V |
| Long term DC stability voltage | V(LTDS) | Gate driver energized, lambda = 100 Fit | 3600 | V |
| RMS on-state current | IT(RMS) | Applied for all condition angles | 520 | A |
| Average on-state current | IT(AV) | f = 60Hz sinewave, theta = 180 degrees, Tt = 62 degC | 330 | A |
| Repetitive controllable on-state current | ITQRM | VDM = 3/4 VDRM, VD = 3000V, LC = 0.3 uH, Tj = 25/125 degC | 800 | A |
| Surge on-state current | ITSM | One half cycle at 60Hz, Tj = 125 degC start | 4.8 | kA |
| Current-squared, time integration | I2t | One half cycle at 60Hz, Tj = 125 degC start | 9.6 x 10^4 | A2s |
| Critical rate of rise of on-state current | dit/dt | VD = 3000V, IT = 800A, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 25/125 degC, f = 60Hz | 1000 | A/us |
| Critical rate of rise of reverse recovery current | dir/dt | IT = 800A, VA = 3000V, Tj = 25/125 degC, Cs = 0.1 uF, Rs = 10 Ohm | 1000 | A/us |
| Peak forward gate power dissipation | PFGM | — | 5 | kW |
| Peak reverse gate power dissipation | PRGM | — | 17 | kW |
| Average forward gate power dissipation | PFG(AV) | — | 100 | W |
| Average reverse gate power dissipation | PRG(AV) | — | 120 | W |
| Peak forward gate voltage | VFGM | — | 10 | V |
| Peak reverse gate voltage | VRGM | — | 21 | V |
| Peak forward gate current | IFGM | — | 500 | A |
| Peak reverse gate current | IRGM | — | 800 | A |
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| On-state voltage | VTM | IT = 400A, Tj = 125 degC | — | — | 5.5 | V |
| Repetitive peak reverse current | IRRM | VRM = 6500V, Tj = 125 degC | — | — | 250 | mA |
| Repetitive peak off-state current | IDRM | VDM = 6500V, Tj = 125 degC, Gate driver energized | — | — | 100 | mA |
| Reverse gate current | IGRM | VRG = 21V, Tj = 125 degC | — | — | 40 | mA |
| Critical rate of rise of off-state voltage | dv/dt | VD = 3000V, Tj = 125 degC, Gate driver energized (Expo. wave) | 3000 | — | — | V/us |
| Turn-on time | tgt | Tj = 125 degC, IT = 800A, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm | — | — | 5 | us |
| Turn-on delay time | td | Tj = 125 degC, IT = 800A, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm | — | — | 1 | us |
| Turn-on switching energy | Eon | IT = 400A, VD = 3000V, di/dt = 1000A/us, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 0.6 | J/P |
| Storage time | ts | IT = 800A, VDM = 3/4 VDRM, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 3 | us |
| Turn-off switching energy | Eoff | IT = 400A, VDM = 4000V, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 2.3 | J/P |
| Reverse recovery charge | QRR | VA = 3000V, IT = 400A, di/dt = 1000A/us | — | — | 1800 | uC |
| Reverse recovery energy | Erec | Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 4.4 | J/P |
| Gate trigger current | IGT | VD = 24V, RL = 0.1 Ohm, Tj = 25 degC | — | — | 0.5 | A |
| Gate trigger voltage | VGT | DC method | — | — | 1.5 | V |
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Power supply voltage | VGIN | DC power supply input via Phoenix plug | 19 | 20 | 21 | V |
| Gate power consumption | PGIN | IT = 420Arms, f = 780Hz, duty = 0.33 | — | — | 35 | W |
| Delay time of on gate current | tfd | Ta = 25 degC | — | — | 3.0 | us |
| Delay time of off gate current | trd | Ta = 25 degC | — | — | 3.0 | us |
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Mounting force | FM | Required compression clamping | 11.1 | 13 | 15.8 | kN |
| Weight | — | Base module mass | — | 1100 | — | g |
| Pole piece diameter | — | GCT component mating profile (±0.2mm) | — | 47 | — | mm |
| Housing thickness | — | GCT component thickness (±0.5mm) | — | 26 | — | mm |
| Junction operating temperature | Tj | Continuous operation | -10 | — | 125 | degC |
| Storage temperature | Tstg | Ambient environment | -10 | — | 60 | degC |
| Ambient operation temperature | Ta | Local enclosure air (Recommended <= 40 degC) | -10 | — | 60 | degC |
| Junction to Fin thermal resistance | Rth(j-f) | Double-sided cooling configuration | — | — | 0.025 | K/W |
| Interface / Connector Name | Component / Type Identifier | Function |
|---|---|---|
| 20V Power Supply Input | Phoenix Contact MSTB2.5/2-G-5.08AU | Main 20VDC power supply input for the gate driver board |
| Fiber Optic Input | Agilent HFBR-2521 | Receiver port for external optical control pulse lines |
| Fault Signal Output | Agilent HFBR-1521 | Transmitter port for optical feedback and driver status tracking |
| Gate Test Point | On-board Terminal Pin | Physical point for measuring gate potential |
| Cathode Test Point | On-board Terminal Pin | Physical point for measuring cathode potential |
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The Mitsubishi Electric GCU08BB-130 is a high-power symmetrical Gate Commutated Turn-off (GCT) thyristor unit integrated with a dedicated GU-G08 gate driver board assembly, engineered specifically for high-power inverter use. This industrial press-pack type device features an optimized co-axial configuration where the GCT semiconductor and the gate driver are interconnected directly to achieve low-inductance gate commutation and robust noise immunity. The unit provides critical power management with a repetitive peak off-state voltage of 6500V and a repetitive controllable on-state current of 800A. Bearing the manufacturer identification 80173-109-01-2, the GCU08BB-130 delivers dependable solid-state switching for current source inverters, DC choppers, induction heaters, and DC to DC converters.
| Parameter | Symbol | Conditions | Rating / Limit | Unit |
|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | — | 6500 | V |
| Non-repetitive peak reverse voltage | VRSM | — | 6500 | V |
| Repetitive peak off-state voltage | VDRM | Gate driver energized | 6500 | V |
| Non-repetitive peak off-state voltage | VDSM | Gate driver energized | 6500 | V |
| Long term DC stability voltage | V(LTDS) | Gate driver energized, lambda = 100 Fit | 3600 | V |
| RMS on-state current | IT(RMS) | Applied for all condition angles | 520 | A |
| Average on-state current | IT(AV) | f = 60Hz sinewave, theta = 180 degrees, Tt = 62 degC | 330 | A |
| Repetitive controllable on-state current | ITQRM | VDM = 3/4 VDRM, VD = 3000V, LC = 0.3 uH, Tj = 25/125 degC | 800 | A |
| Surge on-state current | ITSM | One half cycle at 60Hz, Tj = 125 degC start | 4.8 | kA |
| Current-squared, time integration | I2t | One half cycle at 60Hz, Tj = 125 degC start | 9.6 x 10^4 | A2s |
| Critical rate of rise of on-state current | dit/dt | VD = 3000V, IT = 800A, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 25/125 degC, f = 60Hz | 1000 | A/us |
| Critical rate of rise of reverse recovery current | dir/dt | IT = 800A, VA = 3000V, Tj = 25/125 degC, Cs = 0.1 uF, Rs = 10 Ohm | 1000 | A/us |
| Peak forward gate power dissipation | PFGM | — | 5 | kW |
| Peak reverse gate power dissipation | PRGM | — | 17 | kW |
| Average forward gate power dissipation | PFG(AV) | — | 100 | W |
| Average reverse gate power dissipation | PRG(AV) | — | 120 | W |
| Peak forward gate voltage | VFGM | — | 10 | V |
| Peak reverse gate voltage | VRGM | — | 21 | V |
| Peak forward gate current | IFGM | — | 500 | A |
| Peak reverse gate current | IRGM | — | 800 | A |
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| On-state voltage | VTM | IT = 400A, Tj = 125 degC | — | — | 5.5 | V |
| Repetitive peak reverse current | IRRM | VRM = 6500V, Tj = 125 degC | — | — | 250 | mA |
| Repetitive peak off-state current | IDRM | VDM = 6500V, Tj = 125 degC, Gate driver energized | — | — | 100 | mA |
| Reverse gate current | IGRM | VRG = 21V, Tj = 125 degC | — | — | 40 | mA |
| Critical rate of rise of off-state voltage | dv/dt | VD = 3000V, Tj = 125 degC, Gate driver energized (Expo. wave) | 3000 | — | — | V/us |
| Turn-on time | tgt | Tj = 125 degC, IT = 800A, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm | — | — | 5 | us |
| Turn-on delay time | td | Tj = 125 degC, IT = 800A, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm | — | — | 1 | us |
| Turn-on switching energy | Eon | IT = 400A, VD = 3000V, di/dt = 1000A/us, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 0.6 | J/P |
| Storage time | ts | IT = 800A, VDM = 3/4 VDRM, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 3 | us |
| Turn-off switching energy | Eoff | IT = 400A, VDM = 4000V, VD = 3000V, Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 2.3 | J/P |
| Reverse recovery charge | QRR | VA = 3000V, IT = 400A, di/dt = 1000A/us | — | — | 1800 | uC |
| Reverse recovery energy | Erec | Cs = 0.1 uF, Rs = 10 Ohm, Tj = 125 degC | — | — | 4.4 | J/P |
| Gate trigger current | IGT | VD = 24V, RL = 0.1 Ohm, Tj = 25 degC | — | — | 0.5 | A |
| Gate trigger voltage | VGT | DC method | — | — | 1.5 | V |
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Power supply voltage | VGIN | DC power supply input via Phoenix plug | 19 | 20 | 21 | V |
| Gate power consumption | PGIN | IT = 420Arms, f = 780Hz, duty = 0.33 | — | — | 35 | W |
| Delay time of on gate current | tfd | Ta = 25 degC | — | — | 3.0 | us |
| Delay time of off gate current | trd | Ta = 25 degC | — | — | 3.0 | us |
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Mounting force | FM | Required compression clamping | 11.1 | 13 | 15.8 | kN |
| Weight | — | Base module mass | — | 1100 | — | g |
| Pole piece diameter | — | GCT component mating profile (±0.2mm) | — | 47 | — | mm |
| Housing thickness | — | GCT component thickness (±0.5mm) | — | 26 | — | mm |
| Junction operating temperature | Tj | Continuous operation | -10 | — | 125 | degC |
| Storage temperature | Tstg | Ambient environment | -10 | — | 60 | degC |
| Ambient operation temperature | Ta | Local enclosure air (Recommended <= 40 degC) | -10 | — | 60 | degC |
| Junction to Fin thermal resistance | Rth(j-f) | Double-sided cooling configuration | — | — | 0.025 | K/W |
| Interface / Connector Name | Component / Type Identifier | Function |
|---|---|---|
| 20V Power Supply Input | Phoenix Contact MSTB2.5/2-G-5.08AU | Main 20VDC power supply input for the gate driver board |
| Fiber Optic Input | Agilent HFBR-2521 | Receiver port for external optical control pulse lines |
| Fault Signal Output | Agilent HFBR-1521 | Transmitter port for optical feedback and driver status tracking |
| Gate Test Point | On-board Terminal Pin | Physical point for measuring gate potential |
| Cathode Test Point | On-board Terminal Pin | Physical point for measuring cathode potential |
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| Country of origin |
United States
|