| Manufacturer |
Mitsubishi Electric Corporation |
| Model Number |
GCU08CB-130 |
| Internal Motherboard Reference Code |
80173-109-01-3 |
| Product Classification |
GCT Thyristor Unit |
| Housing Construction Type |
Press Pack Type |
| Repetitive Peak Reverse Voltage (VRRM) |
6500 V |
| Non-Repetitive Peak Reverse Voltage (VRSM) |
6500 V |
| Repetitive Peak Off-State Voltage (VDRM) |
6500 V |
| Non-Repetitive Peak Off-State Voltage (VDSM) |
6500 V |
| Long Term DC Stability Voltage (V(LTDS)) |
3600 V |
| RMS On-State Current (IT(RMS)) |
800 A |
| Average On-State Current (IT(AV)) |
520 A maximum (330 A nominal) |
| Repetitive Controllable On-State Current (ITQRM) |
800 A |
| Surge On-State Current (ITSM) |
4.8 kA maximum |
| Current-Squared, Time Integration Max Value (I2t) |
7.6 x 10^4 A^2s |
| Critical Rate of Rise of On-State Current (diT/dt) |
1000 A/microsecond |
| Critical Rate of Rise of Reverse Recovery Current (diR/dt) |
1000 A/microsecond |
| Peak Forward Gate Power Dissipation (PFGM) |
5 kW |
| Peak Reverse Gate Power Dissipation (PRGM) |
17 kW |
| Average Forward Gate Power Dissipation (PFG(AV)) |
100 W |
| Average Reverse Gate Power Dissipation (PRG(AV)) |
120 W |
| Peak Forward Gate Voltage (VFGM) |
10 V |
| Peak Reverse Gate Voltage (VRGM) |
21 V |
| Peak Forward Gate Current (IFGM) |
500 A |
| Peak Reverse Gate Current (IRGM) |
800 A |
| Gate Driver Power Supply Input Voltage (VGIN) |
20 V DC nominal (19 - 21 V DC acceptable window) |
| Gate Driver Power Consumption (PGIN) |
35 W |
| Mechanical Clamping Force Requirement (FM) |
11.1 to 15.8 kN (13 kN nominal benchmark) |
| Thyristor Pole Piece Diameter |
47 mm |
| Assembly Housing Total Thickness |
26 mm |
| Net Structural Weight |
1060 g |
| Junction Operating Temperature Window (Tj) |
-20 to 125 Celsius |
| Ambient Storage Temperature Range (Tstg) |
-40 to 60 Celsius |
| Ambient Operating Temperature Bounds (Ta) |
-10 to 60 Celsius (Recommended threshold: <= 40 Celsius) |
| Thermal Resistance Junction-to-Fin (Rt(j-f)) |
0.025 K/W |