The Mitsubishi Electric GCU08CB-130 is a symmetrical, high-power GCT (Gate Commutated Turn-off) Thyristor Unit integrated with an onboard gate driver. This press-pack semiconductor device features a specialized internal circuit board marked under reference code 80173-109-01-3. It is engineered explicitly for demanding switching actions in current source inverters, heavy-duty DC choppers, induction heating networks, and high-capacity DC to DC power converters. By permanently binding the GCT component to its gate driver on a unified motherboard, the assembly significantly reduces stray circuit loop inductance, ensuring rigid gate pulse synchronization and highly repetitive controllable off-state handling in modular industrial drive frameworks.
| Parameter | Specification |
|---|---|
| Manufacturer | Mitsubishi Electric Corporation |
| Model Number | GCU08CB-130 |
| Internal Motherboard Reference Code | 80173-109-01-3 |
| Product Classification | GCT Thyristor Unit |
| Housing Construction Type | Press Pack Type |
| Repetitive Peak Reverse Voltage (VRRM) | 6500 V |
| Non-Repetitive Peak Reverse Voltage (VRSM) | 6500 V |
| Repetitive Peak Off-State Voltage (VDRM) | 6500 V |
| Non-Repetitive Peak Off-State Voltage (VDSM) | 6500 V |
| Long Term DC Stability Voltage (V(LTDS)) | 3600 V |
| RMS On-State Current (IT(RMS)) | 800 A |
| Average On-State Current (IT(AV)) | 520 A maximum (330 A nominal) |
| Repetitive Controllable On-State Current (ITQRM) | 800 A |
| Surge On-State Current (ITSM) | 4.8 kA maximum |
| Current-Squared, Time Integration Max Value (I2t) | 7.6 x 10^4 A^2s |
| Critical Rate of Rise of On-State Current (diT/dt) | 1000 A/microsecond |
| Critical Rate of Rise of Reverse Recovery Current (diR/dt) | 1000 A/microsecond |
| Peak Forward Gate Power Dissipation (PFGM) | 5 kW |
| Peak Reverse Gate Power Dissipation (PRGM) | 17 kW |
| Average Forward Gate Power Dissipation (PFG(AV)) | 100 W |
| Average Reverse Gate Power Dissipation (PRG(AV)) | 120 W |
| Peak Forward Gate Voltage (VFGM) | 10 V |
| Peak Reverse Gate Voltage (VRGM) | 21 V |
| Peak Forward Gate Current (IFGM) | 500 A |
| Peak Reverse Gate Current (IRGM) | 800 A |
| Gate Driver Power Supply Input Voltage (VGIN) | 20 V DC nominal (19 - 21 V DC acceptable window) |
| Gate Driver Power Consumption (PGIN) | 35 W |
| Mechanical Clamping Force Requirement (FM) | 11.1 to 15.8 kN (13 kN nominal benchmark) |
| Thyristor Pole Piece Diameter | 47 mm |
| Assembly Housing Total Thickness | 26 mm |
| Net Structural Weight | 1060 g |
| Junction Operating Temperature Window (Tj) | -20 to 125 Celsius |
| Ambient Storage Temperature Range (Tstg) | -40 to 60 Celsius |
| Ambient Operating Temperature Bounds (Ta) | -10 to 60 Celsius (Recommended threshold: <= 40 Celsius) |
| Thermal Resistance Junction-to-Fin (Rt(j-f)) | 0.025 K/W |
| Port Component Identifier | Interface Mapping / Engineering Function |
|---|---|
| Power Supply Connector | Phoenix Contact Type MSTB25/2-G-5.08 plug-in port for 20 V DC gate driver power entry |
| Fiber Optic Input Port | HFBR-2521Z Broadcom Optical Receiver for control pulse entry |
| Fault Signal Output Port | HFBR-1521Z Broadcom Optical Transmitter for system response mapping |
| GATE TEST POINT | Onboard probe node for real-time gate voltage diagnosis |
| CATHODE TEST POINT | Onboard probe node mapping the cathode electrical reference return |
| LED A (Green) | Visual confirmation status showing Power Supply OK |
| LED B (Green) | Visual confirmation status mapping Gate conditions |
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Returns & Warranty
Manufacturer: Mitsubishi Electric
Product No.: GCU08CB-130 80173-109-01-3
Country of origin:United States
Product Type: GCT Thyristor Unit
Barcode: 8537101190
Payment: T/T, Western Union
Weight: 1140g
Dimensions: 25cm x 20.7cm x 5.5cm
Shipping port: Xiamen
Warranty: 12 months
The Mitsubishi Electric GCU08CB-130 is a symmetrical, high-power GCT (Gate Commutated Turn-off) Thyristor Unit integrated with an onboard gate driver. This press-pack semiconductor device features a specialized internal circuit board marked under reference code 80173-109-01-3. It is engineered explicitly for demanding switching actions in current source inverters, heavy-duty DC choppers, induction heating networks, and high-capacity DC to DC power converters. By permanently binding the GCT component to its gate driver on a unified motherboard, the assembly significantly reduces stray circuit loop inductance, ensuring rigid gate pulse synchronization and highly repetitive controllable off-state handling in modular industrial drive frameworks.
| Parameter | Specification |
|---|---|
| Manufacturer | Mitsubishi Electric Corporation |
| Model Number | GCU08CB-130 |
| Internal Motherboard Reference Code | 80173-109-01-3 |
| Product Classification | GCT Thyristor Unit |
| Housing Construction Type | Press Pack Type |
| Repetitive Peak Reverse Voltage (VRRM) | 6500 V |
| Non-Repetitive Peak Reverse Voltage (VRSM) | 6500 V |
| Repetitive Peak Off-State Voltage (VDRM) | 6500 V |
| Non-Repetitive Peak Off-State Voltage (VDSM) | 6500 V |
| Long Term DC Stability Voltage (V(LTDS)) | 3600 V |
| RMS On-State Current (IT(RMS)) | 800 A |
| Average On-State Current (IT(AV)) | 520 A maximum (330 A nominal) |
| Repetitive Controllable On-State Current (ITQRM) | 800 A |
| Surge On-State Current (ITSM) | 4.8 kA maximum |
| Current-Squared, Time Integration Max Value (I2t) | 7.6 x 10^4 A^2s |
| Critical Rate of Rise of On-State Current (diT/dt) | 1000 A/microsecond |
| Critical Rate of Rise of Reverse Recovery Current (diR/dt) | 1000 A/microsecond |
| Peak Forward Gate Power Dissipation (PFGM) | 5 kW |
| Peak Reverse Gate Power Dissipation (PRGM) | 17 kW |
| Average Forward Gate Power Dissipation (PFG(AV)) | 100 W |
| Average Reverse Gate Power Dissipation (PRG(AV)) | 120 W |
| Peak Forward Gate Voltage (VFGM) | 10 V |
| Peak Reverse Gate Voltage (VRGM) | 21 V |
| Peak Forward Gate Current (IFGM) | 500 A |
| Peak Reverse Gate Current (IRGM) | 800 A |
| Gate Driver Power Supply Input Voltage (VGIN) | 20 V DC nominal (19 - 21 V DC acceptable window) |
| Gate Driver Power Consumption (PGIN) | 35 W |
| Mechanical Clamping Force Requirement (FM) | 11.1 to 15.8 kN (13 kN nominal benchmark) |
| Thyristor Pole Piece Diameter | 47 mm |
| Assembly Housing Total Thickness | 26 mm |
| Net Structural Weight | 1060 g |
| Junction Operating Temperature Window (Tj) | -20 to 125 Celsius |
| Ambient Storage Temperature Range (Tstg) | -40 to 60 Celsius |
| Ambient Operating Temperature Bounds (Ta) | -10 to 60 Celsius (Recommended threshold: <= 40 Celsius) |
| Thermal Resistance Junction-to-Fin (Rt(j-f)) | 0.025 K/W |
| Port Component Identifier | Interface Mapping / Engineering Function |
|---|---|
| Power Supply Connector | Phoenix Contact Type MSTB25/2-G-5.08 plug-in port for 20 V DC gate driver power entry |
| Fiber Optic Input Port | HFBR-2521Z Broadcom Optical Receiver for control pulse entry |
| Fault Signal Output Port | HFBR-1521Z Broadcom Optical Transmitter for system response mapping |
| GATE TEST POINT | Onboard probe node for real-time gate voltage diagnosis |
| CATHODE TEST POINT | Onboard probe node mapping the cathode electrical reference return |
| LED A (Green) | Visual confirmation status showing Power Supply OK |
| LED B (Green) | Visual confirmation status mapping Gate conditions |
Global Express Shipping
Returns & Warranty
Orders are processed and delivered Monday-Friday (excluding public holidays).
For full eligibility, restocking fees, and international return details, please view our official Refund & Return Policy .
| Color pattern |
Green
|
| Country of origin |
United States
|
| Power source |
DC Power
|
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